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CM100DC-24NFM Datasheet, PDF (2/3 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE
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APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CM100DC-24NFM
HIGH POWER SWITCHING USE
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ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified)
Symbol
Item
Conditions
Min. Typ. Max. Units
ICES Collector cutoff current
VCE=VCES, VGE=0V
-
-
1
mA
VGE(th)
Gate-emitter
threshold voltage
IC=10mA, VCE=10V
4.5
6.0
7.5
V
IGES
VCE(sat)
Gate leakage current
Collector to emitter
saturationvoltage
±VGE=VGES, VCE=0V
IC=100A *6
Tj=25°C
VGE=15V
Tj=125°C
-
-
0.5
μA
-
3.0 4.5
V
-
3.0
-
Cies
Input capacitance
Coes Output capacitance
VGE=0V, VCE=10V *6
-
-
16
-
-
1.3
nF
Cres Reverse transfer capacitance
-
-
0.3
QG
Total gate charge
VCC=600V, IC=100A, VGE=15V
-
450
-
nC
td(on) Turn-on delay time
VCC=600V, IC=100A
-
-
100
tr
Turn-on rise time
td(off) Turn-off delay time
VGE1=VGE2=15V, RG=3.1Ω
Inductive load
-
-
50
-
-
250
ns
tf
Turn-off fall time
trr *3 Reverse recovery time
Qrr *3 Reverse recovery charge
VEC *3 Emitter-collector voltage
Rth(j-c)Q Thermal resistance
Rth(j-c)R
Rth(c-f) Contact thermal resistance
switching operation
IE=100A
IE=100A, VGE=0V
IGBT part (1/2 module) *1
FWDi part (1/2 module) *1
Case to fin,
Thermal grease applied
(1/2module) *1 *2
-
60
200
-
70
120
-
6
－
μC
-
2.0 3.0
V
-
- 0.186
-
-
0.28
°C/W
-
0.02
-
RG
External gate resistance
3.1
-
31
Ω
*1: TC, Tf measured point is just under the chips.
*2: Typical value is measured by using Shin-Etsu Chemical Co.,Ltd "G-747".
*3: IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel
diode (FWDi).
*4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not
exceed Tjmax rating.
*5: Junction temperature (Tj) should not increase beyond 150°C.
*6: Pulse width and repetition rate should be such as to cause neglible temperature rise.
TENTATIVE
TSM-1860
2-3
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