CM100DC-24NFM Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
TENTATIVE
CM100DC-24NFM
Pre. ^{S.Kawabata,H.Takemoto,M.Hiyoshi} _Rev
Apr. Y.Nagashima 1-Dec-'06
HIGH POWER SWITCHING USE
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Notice: This is not a final specification. Some parametric limits are subject to change.
CM100DC-24NFM
Caution: No short circuit capability is designed.
I_C ････････････････････････････ 100A
V_CES ････････････････････････ 1200V
Insulated Type
2-elements in a pack
APPLICATION
High frequency switching use & Resonant inverter power supply, etc
ABSOLUTE MAXIMUM RATINGS (T_j=25°C, unless otherwise specified)
Symbol
Item
Conditions
V_CES Collector-emitter voltage
V_GES Gate-emitter voltage
I_C
Collector current
I_CM
I_E
I_EM
*3
*3 ^{Emitter current}
P_C ^*5 Maximum collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
V_iso
Isolation voltage
- Torque strength
G-E Short
C-E Short
Operation
Pulse ^*4
Operation
Pulse ^*4
T_C=25°C ^*1
Main terminal to base plate, AC 1 min.
Main terminal M6
- Torque strength
Mounting holes M6
- Weight
Typical value
Ratings
1200
± 20
100
200
100
200
670
- 40 ~ +150
- 40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
375
Units
V
V
A
A
W
°C
°C
V
Nï½¥m
Nï½¥m
g
TENTATIVE
TSM-1860
1-3