CM1000DU-34NF_04 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature^*3
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC’ = 104°C
Pulse
TC = 25°C
Pulse
TC’ = 25°C
Conditions
Main terminal to base plate, AC 1 min.
Main terminal M6
Mounting holes M6
Typical value
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
(Note 2)
(Note 2)
Ratings
1700
±20
1000
2000
1000
2000
8900
–40 ~ +150
–40 ~ +125
3500
3.5 ~ 4.5
3.5 ~ 4.5
1400
Unit
V
V
A
A
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th) Gate-emitter threshold voltage IC = 100mA, VCE = 10V
5.5
IGES
Gate leakage current
VGE = VGES, VCE = 0V
—
VCE(sat)
(chip)
Collector-emitter saturation voltage Tj = 25°C
(without lead resistance)
Tj = 125°C
IC = 1000A, VGE = 15V
—
(Note 4)
—
R(lead)
Module lead resistance
Ic = 1000A, terminal-chip
—
Cies
Input capacitance
—
VCE = 10V
Coes
Output capacitance
—
VGE = 0V
Cres
Reverse transfer capacitance
—
QG
Total gate charge
VCC = 1000V, IC = 1000A, VGE = 15V
—
td(on)
Turn-on delay time
—
tr
Turn-on rise time
VCC = 1000V, IC = 1000A
—
td(off)
Turn-off delay time
VGE1 = VGE2 = 15V
—
tf
Turn-off fall time
RG = 0.47Ω, Inductive load switching operation
—
trr (Note 1) Reverse recovery time
IE = 1000A
—
Qrr (Note 1) Reverse recovery charge
—
VEC(Note 1) Emitter-collector voltage
(chip)
(without lead resistance)
IE = 1000A, VGE = 0V
—
Rth(j-c’)Q _{Thermal resistance*1}
IGBT part (1/2 module)
—
Rth(j-c’)R
FWDi part (1/2 module)
—
Rth(c-f)
Contact thermal resistance^*2 Case to fin, Thermal compound applied (1/2 module)
—
RG
External gate resistance
0.47
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) dose not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
*^{1 : Tc measured point is just under the chips.}
If you use this value, Rth(f-a) should be measured just under the chips.
*^{2 : Typical value is measured by using Shin-etsu Silicone “G-746”.}
*^{3 : The operation temperature is restrained by the permission temperature of female connector.}
Limits
Typ.
—
7
—
2.2
2.45
0.286
—
—
—
6000
—
—
—
—
—
90
2.3
—
—
0.016
—
Max.
1
8.5
5
2.8
—
—
220
25
4.7
—
600
150
900
200
450
—
3
0.014
0.023
—
4.7
Unit
mA
V
µA
V
mΩ
nF
nC
ns
ns
µC
V
°C/W
Ω
Sep. 2004