CM1000DU-34NF_04 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

CM1000DU-34NF
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
q IC ................................................................ 1000A
q VCES .......................................................... 1700V
q Insulated Type
q 2-elements in a pack
APPLICATION
General purpose inverters Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
A,B HOUSING Type
(J. S. T. Mfg. Co. Ltd)
A : VHR-2N
B : VHR-5N
Tc measured point
(The side of Cu
base plate)
150
137.5±0.25
42
14 14
Tc measured point
(The side of Cu
12 2 _{base plate)}
34.6
+1.0
–0.5
4
A
B
8-f6.5
MOUNTING HOLES
E2
C1
9-M6 NUTS 12
14 14 14 14 14 14
42
42
1.9 ±0.2
34.6
+1.0
–0.5
LABEL
C2
C2E1
E2
C1
C1
CIRCUIT DIAGRAM
Sep. 2004