BCR3KM-14 Datasheet, PDF (2/2 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM-14
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
V TM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage
@
#
!
Gate trigger current
@
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VDRM applied
Tc=25°C, ITM=4.5A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ^V3
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Limits
Min. Typ. Max.
—
— 2.0
—
— 1.6
—
— 1.5
—
— 1.5
—
— 1.5
—
—
30
—
—
30
—
—
30
0.2
—
—
—
— 4.0
V2
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
V/µs
Voltage
class
VDRM
(V)
Symbol
(dv/dt)c
Min.
R
—
14
700
L
5
Test conditions
Unit
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state
V/µs
commutating current
(di/dt)c=–1.5A/ms
3. Peak off-state voltage
VD=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
10²
7 TC = 25°C
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
40
35
30
25
20
15
10
5
0
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999