BCR3KM-14 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR3KM-14
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM-14
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.54 ± 0.25
1.1 ± 0.2
E ^{1.1 ± 0.2}
0.75 ± 0.15 _{0.75 ± 0.15}
2.54 ± 0.25
ŒŽ
V Measurement point of
case temperature
q _{IT (RMS)} .................................................................. _3A
q VDRM ^{.................................................................} _700V
q _{IFGT !, IRGT ! , IRGT #} ^{.....................................} _30mA
q _Viso ^{..................................................................} _2000V

ΠT1 TERMINAL
 T2 TERMINAL
Ž Ž GATE TERMINAL
Œ
TO-220FN
APPLICATION
Contactless AC switches, light dimmer, electric blankets, control of household equipment
such as electric fan, solenoid drivers, small motor control, other general purpose control
applications
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
14
V DRM
Repetitive peak off-state voltage^V1
700
V
V DSM
Non-repetitive peak off-state voltage^V1
840
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I^2t
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
— Weight
Viso
Isolation voltage
V1. Gate open.
Conditions
Ratings
Unit
Commercial frequency, sine full wave 360° conduction, Tc=108°C
3
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
30
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
3.7
A²s
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
3
W
0.3
W
6
V
0.5
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
2000
V
Feb.1999