BCR16UM Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
VTM
On-state voltage
Tc=25°C, ITM=25A, Instantaneous measurement
VFGT !
VRGT !
Gate trigger voltage ^V2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT #
#
IFGT !
IRGT !
Gate trigger current ^V2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
IRGT #
#
VGD
Rth (j-c)
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VD=1/2VDRM
Junction to case ^{V3 V4}
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
V4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
Limits
Min. Typ. Max.
—
—
2.0
—
—
1.5
—
—
1.5
—
—
1.5
—
—
1.5
—
—
15
—
—
15
—
—
15
0.2
—
—
—
—
2.5
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10³
7
5
3
2
10²
7 Tj = 125°C
5
3
2
Tj = 25°C
10¹
7
5
3
2
10⁰
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
10⁰
2 3 4 5 7 10¹
2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999