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BCR16UM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE | |||
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BCR16UM
MITSUBISHI SEMICONDUCTOR â©TRIACâª
BCR16UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
10.2
4.5
1.27
TYPE
NAME
VOLTAGE
CLASS
V
Ï3.8 ± 0.2
1.4
0.8
2.54
2.54 0.6
2.6 ± 0.4
¡IT (RMS) ...................................................................... 16A
¡VDRM ..............................................................400V/600V
¡IFGT !, IRGT !, IRGT # ........................................... 15mA
¡Viso........................................................................ 1500V
APPLICATION
Light dimmer
   V Measurement point of
case temperature
Â
 T1 TERMINAL
 T2 TERMINAL
  GATE TERMINAL
Â
TO-220
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage V1
400
600
V
VDSM
Non-repetitive peak off-state voltage V1
500
720
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
â
Weight
Viso
Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=79°C V3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
Unit
16
A
170
A
121
A2s
5
W
0.5
W
10
V
2
A
â40 ~ +125
°C
â40 ~ +125
°C
2.3
g
1500
V
Feb.1999
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