BA01303 Datasheet, PDF (2/3 Pages) Mitsubishi Electric Semiconductor – Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module

MITSUBISHI SEMICONDUCTOR <InGaP Module>
BA01303
Triple Band(EGSM900/DCS1800/PCS1900) InGaP HBT Front-end module
ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C)
Symbol Parameter
Ratings
Unit
Vc Supply voltage
Vpc Power control voltage
7
V
3
V
Vband External voltage for band select
Pin Input power
3
V
10
dBm
Tc(op) Operating case temperature
Tstg Storage temperature
-30 - +85
-40 - +100
deg.C
deg.C
Note: Each maximum rating is guaranteed independently under pulse operation (duty cycle 4:8).
ELECTRICAL CHARACTERISTICS (Ta=25deg.C)
(Tx mode) Vc=3.5V, Po=33/30dBm, Pin=3dBm, Vcont(1/2)=2.6V, Vpc<2.6V, Duty cycle 2:8
Parameter
Symbol Condition
Limits
Unit
MIN TYP MAX
Frequency range(Tx)
f
EGSM
880
-
915 _MHz
DCS/PCS 1710 - 1910
Supply voltage
Vc
3.1 3.5 4.5 V
Output power
Po
Vc=3.5V,Vpc=2.6V
EGSM
33.0 33.5 - _dBm
Pin=3dBm,Vcont=2.6V DCS/PCS 30.0 30.5 -
Efficiency
Eff
EGSM
38 43
-
%
DCS/PCS 30 35
-
Control voltage range
Vpc
0.2 - 2.6 V
Power control current
Ipc
- 4.0 5.5 mA
Band select current
Iband Vband=2.6V
- 0.7 1.2 mA
Harmonics
2 - 14fo
2 - 7fo
EGSM
DCS
-
-
-33 _dBm
-
- -33
2 - 6fo
PCS
-
- -33
Leakage current
Ileak
Vc=4.5V,Vpc=0V
No input power
-
10 40 uA
Coupling value
Pm
EGSM
DCS/PCS
18.5 20.0 21.5 _dBc
12.5 14.0 15.5
Isolation for Rx
Prx
Rx(EGSM) port -
Rx(DCS/PCS) port -
-
15 _dBm
-
13
Isolation 1
Iso1 Vpc=0V,Vcont=2.6V
-
- -38 dBm
Isolation 2
Iso2 Vpc=0V,Vcont=0V
-
- -50 dBm
Rx noise power
Np
EGSM(@935MHz) -
DCS/PCS
-
- -82 dBm/
- -75 100kH
Switching time
ts
-
-
2 usec
Stability
OSC
Vc=3.5V , Vpc=0.2 - 2.6V
Load VSWR=10:1 (all phase)
No oscillation
more than -36dBm
Frequency range(Rx)
Insertion loss (Rx)
f
IL
Vcont1,2,3=0V
Vcont1,2,3=0V
Vcont1,2=0V, Vcont3=2.6V
EGSM
DCS
PCS
EGSM
DCS
PCS
925
-
960 _MHz
1805 - 1880
1930 - 1990
-
1.1 1.3 _dB
- 1.3 1.5
- 1.3 1.5
(2/3)
Jan./2004