M5M4V4265CJ Datasheet, PDF (19/31 Pages) Mitsubishi Electric Semiconductor – EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

MITSUBISHI LSIs
M5M4V4265CJ,TP-5,-6,-7,-5S,-6S,-7S
EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
EDO Mode Byte Early Write Cycle
VIH
RAS
VIL
LCAS
VIH
(or UCAS) VIL
UCAS
VIH
(or LCAS) _VIL
A0~A8
VIH
VIL
VIH
W
VIL
DQ1~DQ8 _VIH
(or DQ9~DQ16)
(INPUTS) VIL
tCRP
tCSH
tRAS
tHPC
tRSH
tRCD
tCAS
tCP
tCAS
tCP
tCAS
tASR tRAH
ROW
ADDRESS
tASC _tCAH
COLUMN-1
tWCS tWCH
tASC
tCAL
tCAH
COLUMN-2
tWCS tWCH
tASC
tCAL
tCAH
COLUMN-3
tWCS tWCH
tDS tDH
DATA
VALID-1
tDS
tDH
DATA
VALID-3
tRP
tCRP
tASR
ROW
ADDRESS
DQ1~DQ8 _VOH
(or DQ9~DQ16)
(OUTPUTS) VOL
D(oQr 9_D~QD1Q~1_D6_Q8)VIH
(INPUTS) VIL
Hi-Z
tDS
tDH
DATA
VALID-2
DQ9~DQ16 _VOH
(or DQ1~DQ8)
Hi-Z
(OUTPUTS) VOL
VIH
OE
VIL
19 _{M5M4V4265CJ,TP-5,-5S:under development}