M6MGB166S4BWG Datasheet, PDF (18/30 Pages) Mitsubishi Electric Semiconductor – 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

MITSUBISHI LSIs
M6MGB/T166S4BWG
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
AC WAVEFORMS FOR WORD PROGRAM OPERATION WITH BGO (F-WE# control)
F-A19~F-A17, ^VIH
A16~A7
VIL
VIH
A6 ~A0
VIL
VIH
F-CE#
VIL
VIH
F-OE#
VIL
VIH
F-WE#
VIL
VIH
DATA
VIL
VIH
F-RY/BY#
VIL
BANK ADDRESS
VALID
PROGRAM DATA TO READ STATUS
BANK(I)
REGISTER
ADDRESS VALID
VALID
tWC
tAS
tAH
tCS
tCH
tWP
tWPH
tOEH
tDS
40H
DIN
SRD
tDH
tWHRL
Change Bank Address
ARRAY READ FROM BANK(II) WITH BGO
VALID
VALID
VALID
ta(CE)
VALID
ta(OE)
DOUT
DOUT
AC WAVEFORMS FOR WORD PROGRAM OPERATION WITH BGO (F-CE# control)
F-A19~F-A17, ^VIH
A16~A7
VIL
BANK ADDRESS
VALID
PROGRAM DATA TO READ STATUS
BANK(I)
REGISTER
ADDRESS VALID
Change Bank Address
ARRAY READ FROM BANK(II) WITH BGO
VALID
VALID
VIH
A6 ~A0
VIL
VIH
F-CE#
VIL
VIH
F-OE#
VIL
VIH
F-WE#
VIL
VIH
DATA
VIL
VIH
F-RY/BY#
VIL
VALID
tWC
tAS
tCEP
tWS
tCEPH
tCH
tOEH
tDS
40H
DIN
SRD
tDH
tEHRL
VALID
ta(CE)
VALID
ta(OE)
DOUT
DOUT
18
Apr. 1999 , Rev.1.7