RD04HMS2_11 Datasheet, PDF (17/21 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W

< Silicon RF Power MOS FET (Discrete) >
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
Input / Output Impedance VS. Freqency Characteristics
Zin* (f=380, 425, 470MHz)
Zo=50ohm
f=470MHz
f=425MHz
f=380MHz
@Pin=0.2W, Vds=12.5V,Idq=0.1A
f
Zin*
(MHz) (ohm)
380 13.33 + j 5.61
425 13.49 + j 7.55
470 10.39 + j 9.64
Zin*: Complex conjugate of intput impedance
Zout* (f=380, 425, 470MHz)
Zo=50ohm
f=470MHz
f=425MHz
f=380MHz
@Pin=0.2W, Vds=12.5V,Idq=0.1A
f
Zout*
(MHz) (ohm)
380 7.83 + j 7.20
425 7.35 + j 7.93
470 6.32 + j 8.95
Zout*: Complex conjugate of output impedance
Publication Date : Oct．2011
17