RD04HMS2_11 Datasheet, PDF (1/21 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W

< Silicon RF Power MOS FET (Discrete) >
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
DESCRIPTION
RD04HMS2 is MOS FET type transistor specifically
designed for VHF/UHF/890-950MHz RF power
amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
FEATURES
1. High Power gain and High Efficiency
Pout=5.0Wtyp., Gp=14dBtyp.
Drain Effi.=53%typ.
@Vds=12.5V, Pin=0.2W, f=950MHz
2. Integrated gate protection diode
INDEX MARK
(Gate)
APPLICATION
For output stage of high power amplifiers in VHF/
UHF/890-950MHz band mobile radio sets.
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD04HMS2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders (i.e. tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
VDSS Drain to Source Voltage
VGSS Gate to Source Voltage
Pch Channel Dissipation
Pin Input Power
ID Drain Current
Tch Junction Temperature
Tstg Storage Temperature
Rth j-c Thermal Resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50
-
-
-
Junction to Case
RATINGS
40
-5/+10
50
0.7
3
150
-40 to +125
2.5
Note: Above parameters are guaranteed independently.
UNIT
V
V
W
W
A
°C
°C
°C/W
Publication Date : Oct．2011
1