M2S28D20ATP Datasheet, PDF (17/36 Pages) Mitsubishi Electric Semiconductor – 128M Double Data Rate Synchronous DRAM

DDR SDRAM (Rev.0.1)
Jun,'00 Preliminary
MITSUBISHI LSIs
M2S28D20/ 30/ 40ATP
128M Double Data Rate Synchronous DRAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~ 70^oC, Vdd = VddQ = 2.5V + 0.2V, Vss = VssQ = 0V, Output Open, unless otherwise noted)
Symbol
Parameter/Test Conditions
Organization
OPERATING CURRENT: One Bank; Active-Precharge; t RC = t RC MIN; t CK
x4
IDD0 = t CK MIN; DQ, DM and DQS inputs changing twice per clock cycle; address
x8
and control inputs changing once per clock cycle
x16
OPERATING CURRENT: One Bank; Active-Read-Precharge;
x4
IDD1 Burst = 2; t RC = t RC MIN; CL = 2.5; t CK = t CK MIN; IOUT= 0mA;
x8
Address and control inputs changing once per clock cycle
x16
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; power-
IDD2P _{down mode; CKE <VIL (MAX); t CK = t CK MIN}
x4/x8/x16
Limits(Max.)
-75
-10
105
95
110
105
120
115
110
100
115
110
135
130
20
20
IDLE STANDBY CURRENT: /CS > VIH (MIN); All banks idle;
IDD2N CKE > VIH (MIN); t CK = t CK MIN; Address and other control inputs changing x4/x8/x16
40
40
once per clock cycle
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; power-
IDD3P _{down mode; CKE < VIL (MAX); t CK = t CK MIN}
x4/x8/x16
40
40
ACTIVE STANDBY CURRENT: /CS > VIH (MIN); CKE > VIH (MIN); One
x4
IDD3N ^{bank; Active-Precharge; t RC = t RAS MAX; t CK = t CK MIN; DQ,DM and}
x8
DQS inputs changing twice per clock cycle; address and other control inputs
changing once per clock cycle
x16
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;One bank active;
x4
IDD4R Address and control inputs changing once per clock cycle;CL=2.5; t CK = t CK
x8
MIN; IOUT = 0 mA
x16
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active;
x4
IDD4W Address and control inputs changing once per clock cycle; CL=2.5; t CK = t CK
x8
MIN;DQ, DM and DQS inputs changing twice per clock cycle
x16
60
55
65
60
75
70
150
140
170
160
210
200
145
135
165
155
200
180
IDD5 AUTO REFRESH CURRENT: t RC = t RFC (MIN)
x4/x8/x16 190
180
IDD6 SELF REFRESH CURRENT: CKE < 0.2V
x4/x8/x16
3
3
Unit Notes
mA
9
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70^oC, Vdd = VddQ = 2.5V + 0.2V, Vss = VssQ = 0V, Output Open, unless otherwise noted)
Symbol
P a ra me ter / Test C o nd itio ns
L im its
U nit
M in.
M ax.
V IH (A C ) H igh- Level Inp ut V o ltage (A C )
Vref + 0.35
V
V IL(A C ) Lo w - Level Inp ut V o ltage (A C )
Vref - 0.35
V
V ID (A C ) Inp ut D ifferential V o ltage, C LK and /C LK
0.7
VddQ + 0.6
V
V IX (A C ) Inp ut C ro ssing P o int V o ltage, C LK and /C LK
0.5*VddQ - 0.2 0.5*VddQ + 0.2 V
IO Z
O ff- state O utp ut C urrent /Q flo ating V o = 0 ~ V d d Q
-5
5
µ^A
II
Input C urrent / VIN =0 ~ VddQ
-2
2
µ^A
IO H
O utp ut H igh C urrent (V O U T = 1 .9 5 V )
- 1 6 .8
mA
IO L
O utp ut H igh C urrent (V O U T = 0 .3 5 V )
1 6 .8
mA
N otes
7
8
MITSUBISHI ELECTRIC
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