MH16S72BDFA-7 Datasheet, PDF (12/56 Pages) Mitsubishi Electric Semiconductor – 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
POWER ON SEQUENCE
Before s tarting normal operation, the following power on sequence is necessary to prevent
a SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQMB high and NOP
condition at the inputs.
2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 500µs.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burs t Length, Burs t Type and /CAS Latency can be programmed by setting the mode
register(MRS). The mode register stores these date until the next MRS command, which
may be issue when both banks are in idle state. After tRSC from a MRS command, the
SDRAM is ready for new command.
CK
/S
BA0 BA1 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
/RAS
0 0 0 0 WM 0 0 LTMODE BT
BL
/CAS
/WE
BA0,1 A11-0
V
LATENCY
MODE
CL
000
001
010
011
100
101
110
111
/CAS LATENCY
R
R
2
3
R
R
R
R
BURST
LENGTH
BL
000
001
010
011
100
101
110
111
BT= 0
1
2
4
8
R
R
R
FP
BT= 1
1
2
4
8
R
R
R
R
BURST
TYPE
0 SEQUENTIAL
1
INTERLEAVED
WRITE
MODE
0 BURST
1
SINGLE BIT
R:Reserved for Future Us e
FP: Full Page
MIT-DS-0329-0.0
MITSUBISHI
ELECTRIC
19/Jun/1999 ₁₂