MH16S72BDFA-7 Datasheet, PDF (1/56 Pages) Mitsubishi Electric Semiconductor – 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PRELIMINARY
Some of contents are subject to change w ithout notice.
DESCRIPTION
The MH16S72BDFA is 16777216 - word x 72-bit
Sy nchronous DRAM module. This consist of eighteen
industry standard 16M x 4 Sy nchronous DRAMs in
TSOP.
The TSOP on a card edge dual in-line package prov ides
any application where high densities and large of
quantities memory are required.
This is a socket-ty pe memory m odule ,suitable f or
easy interchange or addition of module.
FEATURES
Type name
Max.
Frequency
CLK
Access Time
[component level]
MH16S72BDFA-7
MH16S72BDFA-8
100MHz
100MHz
6ns (CL = 2, 3)
6ns (CL = 3)
85pin 1pin
94pin
95pin
10pin
11pin
Utilizes industry standard 16M X 4 Synchronous DRAMs in
TSOP package , industry standard Resistered buffer in TSSOP
package and industry standard PLL in TSSOP package
Single 3.3V +/- 0.3V supply
LVTTL Interface
Burst length 1/2/4/8/Full Page(programmable)
Burst W rite / Single W rite(programmable)
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
4096 refresh cycles every 64ms
Discrete IC and module design conform to
PC/100 specification.
(module Spec. Rev. 1.2 and SPD 1.2A)
124pin 40pin
125pin 41pin
APPLICATION
Main memory unit for computers, Microcomputer memory.
168pin 84pin
MIT-DS-0329-0.0
MITSUBISHI
ELECTRIC
19/Jun/1999 ₁