PS21964-T Datasheet, PDF (10/10 Pages) Mitsubishi Electric Semiconductor – 600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21964-T/-AT/-CT/-TW
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 11 AN EXAMPLE OF TYPICAL DIP-IPM APPLICATION CIRCUIT
C1: Electrolytic capacitor with good temperature characteristics
C2,C3: 0.22~2µF R-category ceramic capacitor for noise filtering
C2 C1 C2 C1 C2 C1
VUFB
VVFB
VWFB
HVIC
VP1
VCC VUB
C3
UP
UP UOUT
VUS
DIP-IPM
P
U
Bootstrap negative
electrodes should be
connected to U, V, W
terminals directly and
separated from the
main output wires.
VVB
VP
VP VOUT
VVS
V
M
VWB
WP
WP ^WOUT
VNC
COM VWS
W
5V line C3
LVIC
VN1
VCC
UOUT
UN
VN
WN
Fo
VNC
VOUT
UN
VN
WN
WOUT
Fo
GND
CIN
Long wiring here might
cause short-circuit.
N
C
15V line
Long GND wiring here might
generate noise to input and
cause IGBT malfunction.
B _R1
C4
Shunt
resistor
A
N1
Long wiring here might cause SC
level fluctuation and malfunction.
Note 1 : Input drive is High-Active type. There is a 3.3kΩ(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the
wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on
and turn-off threshold voltage.
2 : Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible.
3 : FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10kΩ.
4 : To prevent erroneous protection, the wiring of A, B, C should be as short as possible.
5 : The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2µs. SC interrupting time might vary with the
wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4.
6 : All capacitors should be mounted as close to the terminals of the DIP-IPM as possible. (C1: good temperature, frequency character-
istic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.)
7 : To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible.
Generally a 0.1-0.22µF snubber between the P-N1 terminals is recommended.
8 : Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
leave another one open.
9 : It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended
to connect control GND and power GND at only a point.
Aug. 2007
10