MH8S72BAFD-7 Datasheet, PDF (1/56 Pages) Mitsubishi Electric Semiconductor – 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

MH8S72BAFD -7, -8 ^{MITSUBISHI LSIs}
P ^{rSepl iemci.n a r y} _{603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM}
PRELIMINARY
Some of contents are subject to change without notice.
DESCRIPTION
The MH8S72BAFD is 8388608 - word x 72-bit
Synchronous DRAM stacked structural module. This consist
of nine industry standard 8M x 8 Synchronous DRAMs in
TSOP.
The mounting of TSOP on a card edge dual in-line package
provides any application where high densities and large of
quantities memory are required.
This is a socket-type memory module ,suitable for easy
interchange or addition of module.
85pin 1pin
FEATURES
Type name
MH8S72BAFD-7
MH8S72BAFD-8
Max.
Frequency
100MHz
100MHz
CLK
Access Time
[component level]
6ns (CL = 2, 3)
6ns (CL = 3)
Utilizes industry standard 8M X 8 Synchronous DRAMs in
TSOP package , industry standard Resister in TSSOP
package
Single 3.3V +/- 0.3V supply
LVTTL Interface
4096 refresh cycles every 64ms
Discrete IC and module design conform to
PC/100 specification.
(module Spec. Rev. 1.1 and SPD 1.2A)
94pin
95pin
10pin
11pin
124pin 40pin
125pin 41pin
APPLICATION
Main memory unit for computers, Microcomputer memory.
168pin 84pin
MIT-DS-0273-0.2
MITSUBISHI
ELECTRIC
1/ Dec./1998 1