MH4V36AM-6 Datasheet, PDF (1/18 Pages) Mitsubishi Electric Semiconductor – FAST PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM

Preliminary Spec.
Some of contents are subject to change without notice.
MITSUBISHI LSIs
MH4V36AM-6,-7
FAST PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM
DESCRIPTION
The MH4V36AM is an 4M word by 36-bit dynamic
RAM module and consists of 2 industry standard
4M X 16 dynamic RAMs in TSOP and 1 industry
standard 4M X 4(4CAS) dynamic RAMs in TSOP.
The ICs are mounted on both sides of one small
ceracom PC board with flash gold plating and form a
convenient 68-pin package.
FEATURES
Type name
MH4V36AM-6
RAS
CAS Address OE
Cycle
access access access access
time
time
time
time
time
(max.ns) (max.ns) (max.ns) (max.ns) (min.ns)
60
15
30
15
110
MH4V36AM-7
70
20
35
20
130
Utilizes industry standard 4M X 16 DRAMs in TSOP package
and industry standard 4M X 4(4CAS) DRAM in TSOP
package
Single 3.3V +/- 0.3V supply
Low stand-by power dissipation
5.4mW (Max) . . . . . . . . . . . . . . . . . CMOS lnput level
Low operating power dissipation
MH4V36AM - 6 . . . . . . . . . . . . . . . . 1.155W (Max)
MH4V36AM - 7 . . . . . . . . . . . . . . . . 1.100W (Max)
All inputs, output TTL compatible and low capacitance
4096 refresh cycles every 64ms (A0 ~ A11)
Includes 2pcs 0.22uF decoupling capacitors
APPLICATION
Main memory unit for computers, Microcomputer memory,
Refresh memory for CRT
PIN CONFIGURATION ( TOP VIEW )
DQ1 1
DQ2 2
DQ3 3
DQ4 4
DQ5 5
Vss 6
DQ6 7
DQ7 8
DQ8 9
DQP1 10
DQ9 11
Vcc 12
DQ10 13
DQ11 14
DQ12 15
DQ13 16
DQ14 17
Vss 18
DQ15 19
DQ16 20
DQP2 21
Vcc 22
/CAS0 23
/CAS3 24
A0 25
A1 26
A2 27
Vss 28
A3 29
A4 30
A5 31
/RAS 32
A6 33
Vcc 34
68 DQP4
67 DQ32
66 DQ31
65 DQ30
64 DQ29
63 Vss
62 DQ28
61 DQ27
60 DQ26
59 DQ25
58 DQP3
57 Vcc
56 DQ24
55 DQ23
54 DQ22
53 DQ21
52 DQ20
51 Vss
50 DQ19
49 DQ18
48 DQ17
47 Vcc
46 /CAS2
45 /CAS1
44 /W
43 /OE
42 RFU(NC)
41 Vss
40 A11
39 A10
38 A9
37 A8
36 A7
35 Vcc
MIT-DS-0071-0.1
MITSUBISHI
ELECTRIC
( 1 / 18 )
Sep./19 /1996