M5M417400CJ Datasheet, PDF (1/22 Pages) Mitsubishi Electric Semiconductor – FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM

MITSUBISHI LSIs
M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 4194304-word by 4-bit dynamic RAMS,
fabricated with the high performance CMOS process, and is ideal
for large-capacity memory systems where high speed, low power
dissipation, and low costs are essential.
The use of double-layer metal process combined with twin-well
CMOS technology and a single-transistor dynamic storage stacked
capacitor cell provide high circuit density at reduced costs.
Multiplexed address inputs permit both a reduction in pins and an
increase in system densities.
FEATURES
Type Name
M5M417400CXX-5,-5S
M5M417400CXX-6,-6S
M5M417400CXX-7,-7S
RAS
access
time
(max.ns)
50
60
70
CAS
access
time
(max.ns)
13
15
20
Address
access
time
(max.ns)
25
30
35
OE
access
time
(max.ns)
13
15
20
C ycle
time
(min.ns)
90
110
130
Power
dissipa-
tion
(typ.mW)
655
540
475
XX=J, TP
• Standard 26 pin SOJ, 26 pin TSOP
• Single 5V ± 10% supply
• Low stand-by power dissipation
5.5mW(Max) ..................................CMOS Input level
2.2mW (Max)* ...............................CMOS Input level
• Low operating power dissipation
M5M417400Cxx-5,-5S .................... 800.0mW (Max)
M5M417400Cxx-6,-6S .................... 660.0mW (Max)
M5M417400Cxx-7,-7S .................... 580.0mW (Max)
• Self refresh capability *
self refresh current ................................ 200.0 µ A(Max)
• Fast-page mode, Read-modify-write, RAS-only refresh
• CAS before RAS refresh, Hidden refresh capabilities
Early-write mode and OE to control output buffer impedance
• All inputs, output TTL compatible and low capacitance
• 2048 refresh cycles every 32ms (A₀ ~ A₁₀)
*Applicable to self refresh version (M5M417400CJ,TP-5S,-6S,
-7S :option) only
PIN DESCRIPTION
Pin name
A₀ ~ A₁₁
DQ₁ ~ DQ₄
RAS
CAS
W
OE
V_CC
V_SS
Function
Address inputs
Data inputs / outputs
Row address strobe input
Column address strobe input
Write control input
Output enable input
Power supply (+5V)
Ground (0V)
PIN CONFIGURATION (TOP VIEW)
Outline 26P0D-B (300mil SOJ)
APPLICATION
Main memory unit for computers, Microcomputer memory, Refresh
memory for CRT
Outline 26P3D-E (300mil TSOP)
NC: NO CONNECTION
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