CMA-252LN Datasheet, PDF (4/6 Pages) Mini-Circuits – Monolithic Amplifier

Monolithic E-PHEMT MMIC Amplifier
CMA-252LN+
Recommended Application and Characterization Test Circuit
Rbias
1
3
8
6
4,5,7, paddle
2
TB-759+
Fig 1. Application and Characterization circuit
Note: This block diagram is used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-759+)
Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3) and noise figure measured using Agilent’s N5242A
PNA-X microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 2.5 MHz apart, 2 dBm/tone at output.
Typical Device Current vs Rbias (at R1=825 ohms)
90
Vs=4V
80
Vs=3V
70
60
50
40
30
20
0
200
400
600
800
1000
1200
1400
Rbias (Ohms)
Suggested PCB Layout (PL-405)
Product Marking
MCL
CMA-
252LN+
DC YYWW
ceramic body
model
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits^®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 [phone] [e-mail]
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