XR1007-QD_10 Datasheet, PDF (5/7 Pages) Mimix Broadband – 10.0-18.0 GHz GaAs Receiver

10.0-18.0 GHz GaAs Receiver
QFN, 7x7 mm
November 2010 - Rev 14-Nov-10
R1007-QD
App Note [1] Biasing - The device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=80mA and
Vd2=4.0V, Id2=100mA. It is also recommended to use active biasing to keep the currents constant as the RF power and
temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value
resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct
drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected
with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate
bias is available before applying the positive drain supply.
MTTF
XR1007-QD, MTTF (yrs) vs. Backplate Temperature (°C)
1.0E+06
1.0E+05
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
55
65
75
85
95
Temperature (°C)
MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal
back-plate.
Typical Application
XR1007-QD
RF IN
LNA
10.0-18.0 GHz
IR Mixer
BPF
Coupler
IF Out
2 GHz
AGC Control
LO(+2.0dBm)
8.0-16.0 GHz (USB Operation)
12.0-20.0 GHz (LSB Operation)
Mimix Broadband MMIC-based 10.0-18.0 GHz Receiver Block Diagram
Mimix Broadband's 10.0-18.0 GHz XR1007-QD GaAs Receiver can be used in saturated radio applications and linear modulation schemes up
to 256 QAM. The receiver can be used in upper and lower sideband applications from 10.0-18.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
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