XP1020-QE Datasheet, PDF (4/6 Pages) Mimix Broadband – 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN

11.0-19.0 GHz GaAs MMIC
Power Amplifier, QFN
January 2007 - Rev 26-Jan-07
P1020-QE
App Note [1] Biasing - It is recommended to bias the amplifier with Vd=5.0V and Id=380mA. It is also recommended to use active
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on
the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.9V. Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative
gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
Each DC pin (Vd and Vg) needs to have DC bypass capacitance (~0.01 uF) as close to the package as possible.
MTTF Graphs
1.00E+08
XP1020-QE Vd=5.0 V, Id=380 mA
1.00E+07
1.00E+06
1.00E+05
1.00E+04
1.00E+03
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
No RF
Pout=+27 dBm
1.00E+06
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
55
XP1020-QE Vd=5.0 V, Id=380 mA
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
No RF
Pout=+27 dBm
95
93
91
89
87
85
83
81
79
77
75
73
71
69
67
65
63
61
59
57
55
55
XP1020-QE Vd=5.0 V, Id=380 mA
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
No RF
Pout=+27 dBm
300
275
250
225
200
175
150
55
XP1020-QE Vd=5.0 V, Id=380 mA
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
No RF
Pout=+27 dBm
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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