XP1020-QE Datasheet, PDF (1/6 Pages) Mimix Broadband – 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN

11.0-19.0 GHz GaAs MMIC
Power Amplifier, QFN
January 2007 - Rev 26-Jan-07
Features
17.0 dB Small Signal Gain
+27.0 dBm Saturated Output Power
SMD, 3x3 mm QFN Package
RoHS Compliant
100% RF, DC and Output Power Testing
P1020-QE
General Description
Mimix Broadband’s two stage 11.0-19.0 GHz GaAs
MMIC power amplifier has a small signal gain of
17.0 dB with a +27.0 dBm saturated output power.
This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The device comes in a
3x3mm QFN Surface Mount Package offering
excellent RF and thermal properties and is RoHS
compliant. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
500 mA
+0.3 VDC
+17.0 dBm
-65 to +165 ^OC
-55 to MTTF Table¹
MTTF Table¹
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 ^oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=5.0V, Vg=-0.9V Typical)
Units Min. Typ. Max.
GHz
11.0
-
19.0
dB
-
12.0
-
dB
-
8.0
-
dB
-
17.0
-
dB
-
+/-1.0
-
dB
-
40.0
-
dBm
-
+27.0
-
VDC
-
+5.0 +8.0
VDC
-1.0
-0.9
0.0
mA
-
380
420
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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