XP1014-BD Datasheet, PDF (4/5 Pages) Mimix Broadband – 8.5-11.0 GHz GaAs MMIC Power Amplifier

8.5-11.0 GHz GaAs MMIC
Power Amplifier
August 2007 - Rev 03-Aug-07
P1014-BD
App Note [1] Biasing - This device has been designed with two options for biasing. Vg1 applies gate bias through an active, on-chip
bias circuit and Vg2 applies gate bias through a resistive divider. Using the first option and applying a nominal bias of Vg1=-5.0V and
Vd (1,2)=8.0V will typically yield a total drain current Id(TOTAL)=450mA. Alternatively, the drain current can be regulated by setting
Vg2=-5.0V and Vd(1,2)=8.0V which will typically yield a total drain current Id(TOTAL)=450mA. It is recommended to use active biasing
to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Also, make sure to
sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
Each DC pad (Vd1, 2 and Vg or Vgg) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional
DC bypass capacitance (~0.01 uF) is also recommended.
MTTF
1.0E+05
1.0E+04
1.0E+03
1.0E+02
XP1014 MTTF vs. Backplate Temperature and Pulsed Duty Cycle
100% DC
50% DC
30% DC
10% DC
1.0E+01
1.0E+00
1.0E-01
20 30 40 50 60 70 80 90 100 110 120
Backplate Temp (C)
MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate.
Bias Conditions: Vd1=Vd2=8.0V, Id(TOTAL)=450 mA
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu, Taiwan, R.O.C
Tel [phone] • Fax [phone] • mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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