CMM0618-BD_07 Datasheet, PDF (4/5 Pages) Mimix Broadband – 6.0-18.0 GHz GaAs MMIC Power Amplifier

6.0-18.0 GHz GaAs MMIC
Power Amplifier
August 2007 - Rev 30-Aug-07
CMM0618-BD
App Note [1] Biasing - Note bias can be applied from either side of the device. It is recommended to separately bias each amplifier stage
Vd1 through Vd2 at Vd(1,2)=6.0V with Id1=375 mA, and Id2=375 mA. Separate biasing is recommended if the amplifier is to be used at high
levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel
all stages and adjust the common gate voltage for a total drain current Id(total)=750 mA. It is also recommended to use active biasing to
keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage
available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low
value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current
and thus drain voltage. The typical gate voltage needed to do this is -0.8V. Typically the gate is protected with Silicon diodes to limit the
applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] Bias Arrangement - Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device
as possible.The drain (Vd1,2) bypass paths must also include a 2-3 turn gold air coil as shown. Additional DC bypass capacitance (~0.01 uF) is
also recommended.
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
1.0E+07
CMM0618-BD Vd=6.0 V, Id=750 mA
1.00E+03
CMM0618-BD Vd=6.0 V, Id=750 mA
1.0E+06
1.00E+02
1.0E+05
1.00E+01
1.0E+04
1.00E+00
1.0E+03
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
1.00E-01
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
210
200
190
180
170
160
150
140
130
55
CMM0618-BD Vd=6.0 V, Id=750 mA
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 4 of 5
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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