CMM3020-BD_10 Datasheet, PDF (1/8 Pages) Mimix Broadband – 30.0 kHz-20.0 GHz GaAs MMIC

30.0 kHz-20.0 GHz GaAs MMIC
Distributed Amplifier
May 2010 - Rev 08-May-10
CMM3020-BD
Features
Ultra Wide Band Driver Amplifier
Low Gain Ripple
Positive Gain Slope
9.0 dB Small Signal Gain
+23.0 dBm P1dB Compression Point
+35.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadband’s distributed 30 kHz-20.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 9.0 dB with a
+23.0 dBm P1dB output compression point. This MMIC uses
Mimix Broadband’s GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach process. This
device is well suited for Test Instrumentation, Military, Space,
Microwave Point-to-Point Radio, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+12.0 VDC
Supply Current (Id1)
350 mA
Gate Voltage (Vg)
-5V
Input Power (Pin)
+23.0 dBm
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to +85 ºC
Channel Temperature (Tch)¹ +175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 ^oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)³
Output Return Loss (S22)³
Small Signal Gain (S21)³
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)²
Output Third Order Intermods (OIP3)²
Saturated Output Power (Psat)²
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=8.0V, Vg=-0.5V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
0.00003
8.0
7.0
7.0
-
-
-
-
-
-
-1.5
-
Typ.
-
12.0
12.0
9.0
+/-1.0
35.0
+23.0
+35.0
+26.0
+8.0
-0.5
250
Max.
20.0
-
-
-
-
-
-
-
-
+9.0
0.0
275
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
(2) Optional high power bias Vd=9.0V will typically yield 2-3 dB increase in P1dB, Psat and OIP3.
(3) Unless otherwise indicated, Min./Max. over 2.0-20.0 GHz and biased at Vd=8.0V.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
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