CMM0016-BD_08 Datasheet, PDF (1/6 Pages) Mimix Broadband – 2.0-22.0 GHz GaAs MMIC Power Amplifier

2.0-22.0 GHz GaAs MMIC
Power Amplifier
March 2008 - Rev 04-Mar-08
Features
Ultra Wide Band Power Amplifier
Compact Size/Self Bias Architecture
Positive Gain Slope
10.0 dB Small Signal Gain
+30.0 dBm P1dB Compression Point
+39.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s distributed 2.0-22.0 GHz GaAs
MMIC power amplifier has a small signal gain of 10.0
dB with a +30.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.3 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Test
Instrumentation, Military, Space, Microwave
Point-to-Point Radio, SATCOM and VSAT applications.
CMM0016-BD
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+13.0 VDC
750 mA
+27.0 dBm
-65 to +165 ^OC
-55 to MTTF Graph¹
MTTF Graph¹
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 ^oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intermods (OIP3)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=12.0V Typical)
Units _{Min. Typ. Max.}
GHz
2.0
-
22.0
dB
-
15.0
-
dB
-
10.0
-
dB
-
10.0
-
dB
-
+/-1.0
-
dB
-
40.0
-
dBm
-
+30.0
-
dBm
-
+41.0
-
dBm
-
+39.0
-
VDC
-
+12.0 +12.5
mA
-
690
730
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.