HMC592 Datasheet, PDF (9/11 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz

v02.0109
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
2, 4, 6
Vgg 1-3
Description
This pad is AC coupled and
matched to 50 Ohms.
Gate control for amplifier. Adjust to achieve Idd of 750 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.1 μF are required.
3, 5, 7
Vdd 1-3
8
Die Bottom
RFOUT
GND
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
This pad is AC coupled and
matched to 50 Ohms.
Die bottom must be connected to RF/DC ground.
Interface Schematic
3
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20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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