HMC592 Datasheet, PDF (8/11 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz

v02.0109
3
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8 Vdc
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 62.7 mW/°C above 85 °C)
5.64 W
Thermal Resistance
(channel to die bottom)
15.94 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Outline Drawing
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
Outline D⁺⁶r^.5awing
757
+7.0
750
+7.5
745
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 750 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3 - 90
Die Packaging Information ^[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com