HMC591 Datasheet, PDF (9/11 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz

v02.0109
HMC591
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is AC coupled and
matched to 50 Ohms.
3 - 5, 7, 8
Vdd 1-5
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
6
RFOUT
This pad is AC coupled and
matched to 50 Ohms.
Gate control for amplifier. Adjust to achieve Idd of 1340 mA.
9
Vgg
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.1 μF are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
3
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20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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