HMC591 Datasheet, PDF (7/11 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz

v02.0109
HMC591
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
38
34
30
GAIN
P1dB
Psat
26
22
18
6.5
7
7.5
Vdd SUPPLY VOLTAGE (V)
Reverse Isolation
vs. Temperature, 7V @ 1340 mA
0
-10
-20
+25C
+85C
-30
-40C
-40
-50
-60
-70
-80
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
Gain & Power vs. Supply Current @ 8 GHz
38
34
30
GAIN
P1dB
Psat
26
22
18
940
1140
Idd SUPPLY CURRENT (mA)
1340
Power Dissipation
10
9
8
6GHz
7GHz
8GHz
9GHz
7
10GHz
6
5
-14 -10
-6
-2
2
6
INPUT POWER (dBm)
10
14
3
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8 Vdc
Gate Bias Voltage (Vgg)
-2 to 0 Vdc
RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 117.6 mW/°C above 85 °C)
10.59 W
Thermal Resistance
(channel to die bottom)
8.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+6.5
1355
+7.0
1340
+7.5
1325
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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