HMC441 Datasheet, PDF (8/11 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz

v07.0913
HMC441
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Outline Drawing
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is AC coupled
and matched to 50 Ohms.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Pin Schematic
2, 3
Vdd1, Vdd2
Power Supply Voltage for the amplifier. An external
bypass capacitor of 100 pF is required.
4
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Optional gate control for amplifier. If left open, the
5, 6
Vgg1, Vgg2 amplifier will run at standard current. Negative voltage
applied will reduce current.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]