HMC441 Datasheet, PDF (7/11 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz

v07.0913
HMC441
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Gain, Power & Output IP3
vs. Gate Voltage @ 12 GHz
35
210
30
180
25
150
20
120
15
90
10
60
5
30
0
0
-1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0
Vgg1, Vgg2 Gate Voltage (V)
Gain
P1dB
Psat
IP3
Idd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
Gate Bias Voltage (Vgg1,Vgg2)
RF Input Power (RFIN)(Vdd = +5Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 8.5 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5.5 Vdc
-8 to 0 Vdc
+20 dBm
175 °C
0.76 W
118 °C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
+2.7
+3.0
+3.3
Idd (mA)
88
90
92
80
82
83
Note: Amplifier will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
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Application Support: Phone: [phone] or [e-mail]