MYX28F00AM29EWH Datasheet, PDF (43/51 Pages) –

1Gb Parallel NOR Flash
256Mb, 512Mb, 1Gb, 2Gb: 3V Embe^Mdd^Ye^Xd²P⁸a^Fra⁰l⁰le^Al ^MNO²R⁹F^El^Wash^H*
Write AC Characteristics
*Advanced information. Subject to change without notice.
Figure 27: Ch_Fi_ip_g/_uB_rl_eo₁c₆k_: E_Cr_ha_ips_/e_BlA_ocC_kT_Eim_rasin_eg_AC(8_T-_iB_mi_it_nM_{g (}o₈d_-Be_i)_{t Mode)}
A[MAX:0]/
A–1
CE#
t_WC
AAAh
555h
AAAh
t_AS
t_AH
t_CS
t_CH
AAAh
555h
AAAh
BAh¹
t_GHWL
OE#
t_WP
WE#
t_WPH
DQ[7:0]
t_DS
AAh
t_DH
55h
80h
AAh
55h
10h/
30h
Notes: 1. For a CHIP ERASE command, the address is 555h, and the data is 10h; for a BLOCK ERASE
Notes:
command, the address is BAd, and the data is 30h.
1. For a CHIP ²E^.RA^BS^AE^{d i}c^so^tm^hem^ba^ln^od^ck, t^ah^de^da^rd^esd^sr^.ess is 555h, and the data is 10h; for a BLOCK ERASE command,
the address³i^.s B^SWeA_red_itt,_eha_Aen_Cd^foCt^lh^lhoe_awrd_aina_ct^gta_etri^as_isbt3_ilce0_ssh_, ^f._{aonrdtiCmEi#n-gCodnettraoillsle: dReWadritAeCACChCahraacrtaecrtiestriicsst,icWs.} ^{E#-Controlled}
2. BAd is the block address.
3. See the following tables for timing details: Read AC Characteristics, WE#-Controlled Write AC
Characteristics, and CE#-Controlled Write AC Characteristics.
MYX28F00AM29EWH
Revision 1.0 - 11/14/2014
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. C 9/14 EN
43
69
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Form #: CSI-D-685 Document 003