MYX28F00AM29EWH Datasheet, PDF (1/51 Pages) –

1Gb Parallel NOR Flash
MYX28F00AM29EWH*
*Advanced information. Subject to change without notice.
1Gb - 64M x 16 Parallel NOR Flash Embedded Memory
Features
• Tin Lead Ball metallurgy Sn63Pb37
• Supply voltage
ƒƒ V_CC = 2.7–3.6V (program, erase, read)
ƒƒ V_CCQ = 1.65–V_CC (I/O buffers)
• Asynchronous random/page read
ƒƒ Page size: 16 words or 32 bytes
ƒƒ Page access: 25ns
ƒƒ Random access: 100ns (Fortified BGA)
• Buffer program: 512-word program buffer
• Program time
ƒƒ 0.88μs per byte (1.14 MB/s) TYP when using full
512-word buffer size in buffer program
• Memory organization
ƒƒ Uniform blocks: 128-Kbytes or 64-Kwords each
• Program/erase controller
ƒƒ Embedded byte (x8)/word (x16) program algorithms
• Program/erase suspend and resume capability
ƒƒ Read from another block during a PROGRAM
SUSPEND operation
ƒƒ Read or program another block during an ERASE
SUSPEND operation
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
buffer capability
ƒƒ Fast buffered/batch programming
ƒƒ Fast block/chip erase
• V_PP/WP# pin protection
• Protects first or last block regardless of block protection
settings
• Software protection
ƒƒ Volatile protection
ƒƒ Nonvolatile protection
ƒƒ Password protection
ƒƒ Password access
• Extended memory block
ƒƒ 128-word (256-byte) block for permanent, secure
identification
ƒƒ Programmed or locked at the factory or by the
customer
• Low power consumption: Standby mode
• JESD47-compliant
ƒƒ 100,000 minimum ERASE cycles per block
ƒƒ Data retention: 20 years (TYP)
• 65nm multilevel cell (MLC) process technology
• Green package (Halogen-free)
OptionsMarking
• Configuration
ƒƒ 64 Meg x 16
00A
• FBGA package (Sn63/Pb37)
BG
ƒƒ 64-ball FBGA (13mm x 11mm)
PC
• Operating temperature
ƒƒ Industrial (–40°C ≤ T_C ≤ +85°C)
IT
MYX28F00AM29EWH
Revision 1.0 - 11/14/2014
1
Form #: CSI-D-685 Document 003