ICE15N73FP Datasheet, PDF (4/4 Pages) Icemos Technology – Enhancement Mode MOSFET

ICE15N73FP
Gate Threshold Voltage vs. Junction Temperature
1.2
10000
Capacitance
1.1
V_GS = 0V
I_D = 250µA
f = 1 MHz
Ciss
1000
1.0
Coss
0.9
100
0.8
0.7
0.6
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
10
1
0
Crss
100 200 300 400 500 600
V_DS- Drain to Source Voltage (V)
Drain to Source Breakdown Voltage vs. Junction Temperature
1.2
1.15
I_D = 250µA
1.1
1.05
1.0
0.95
0.9
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
1000
100
Maximum Rate Forward Biased Safe Operating Area
Single Pulse
Tc = 25°C
T = 150°C
V_GS = 10V
10us
10
100us
1ms
1
0.1
R_{DS (ON)} Limit
Package Limit
Thermal Limit
10ms
DC
0.01
1
10
100
V_DS- Drain to Source Voltage (V)
1000
Transient Thermal Response - Junction to Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
Notes:
P_DM
0.00
1.0E-06
1.0E-05
t1
t2
Duty Cycle, D =
t1
t2
1.0E-04 1.0E-03 1.0E-02 1.0E-01
t - Time (seconds)
1.0E-00
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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