ICE15N73FP Datasheet, PDF (3/4 Pages) Icemos Technology – Enhancement Mode MOSFET

ICE15N73FP
Output Characteristics
80
70
60
V_GS = 10V to 6V
50
40
5V
30
20
10
0
0 1 2 3 4 5 6 7 8 9 10
V_DS - Drain to Source Voltage (V)
Transfer Characterstics
6
5
4
25°C
T_J = 150°C
3
2
1
0
01
-55°C
2 3 4 5 6 7 8 9 10
V_GS - Gate to Source Voltage (V)
On State Resistance vs Drain Current
0.16
0.14
0.12
0.10
0.08
V_GS = 10V
0.06
0.04
0.02
0
0 10 20 30 40 50 60 70 80
I_D - Drain Current (A)
On Resistance vs Junction Temperature
3.5
3.0
V_GS = 10V
I_D = 3A
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
10
9
8
7
6
5
4
3
2
1
0
02
Gate Charge
V_DS = 480V
I_D = 10A
V_GS = 10V
4
6
8 10
Q_g - Total Gate Charge (nC)
12 14
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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