ICE11N70 Datasheet, PDF (4/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE11N70
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
Gate Threshold Voltage vs. Junction Temperature
I_D = 250µA
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Drain to Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
I_D = 1mA
100000
Capacitance
10000
1000
100
Ciss
Coss
10
Crss
1
0
100
200 300
400 500 600
V_DS- Drain to Source Voltage (V)
Maximum Rate Forward Biased Safe Operating Area
100 _{Single Pulse}
Tc = 25°C
T = 150°C
V_GS = 10V
10
10us
100us
1.0
1
1ms
10ms
DC
0.9
0.1
R_{DS (ON)} Limit
Package Limit
Thermal Limit
0.8
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
0.01
1
10
100
V_DS- Drain to Source Voltage (V)
1.00 _0.5
Transient Thermal Response - Junction to Case
0.2
0.1
0.10
0.05
0.02
0.01
0.00
1.0E-06
Single Pulse
Notes:
P_DM
t1
t2
Duty Cycle, D =
1.0E-05 1.0E-04 1.0E-03 1.0E-02
t - Time (seconds)
t1
t2
1.0E-01
1.0E-00
1000
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