ICE11N70 Datasheet, PDF (3/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE11N70
35
30
25
20
15
10
5
0
0
Output Characteristics
V_GS = 10V to 7V
6V
5V
3
6
9
12
15
V_DS - Drain to Source Voltage (V)
35
30
25
20
15
10
5
0
0
Transfer Characterstics
T_J= 150°C
25°C
2
4
6
8
10
V_GS - Gate to Source Voltage (V)
600
500
400
300
200
100
0
0
On State Resistance vs Drain Current
V_GS = 10V
5 10 15 20 25 30 35
I_D - Drain Current (A)
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 5.5A
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
10
9
8
7
6
5
4
3
2
1
0
0
Gate Charge
V_DS = 480V
I_D = 11A
10
20 30
40 50
Q_g - Total Gate Charge (nC)
60 70
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