ICE10N65 Datasheet, PDF (4/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE10N65
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50
Gate Threshold Voltage vs. Junction Temperature
I_D = 250µA
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Drain to Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
I_D = 1mA
1.0
0.9
100000
10000
1000
100
Capacitance
Ciss
Coss
10
0
0
Crss
100 200 300 400 500 600
V_DS- Drain to Source Voltage (V)
Maximum Rate Forward Biased Safe Operating Area
100
Single Pulse
Tc = 25°C
T = 150°C
V_GS = 10V
10
10us
100us
1
0.1
R_{DS (ON)} Limit
Package Limit
Thermal Limit
1ms
10ms
DC
0.8
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
0.01
1
10
100
V_DS- Drain to Source Voltage (V)
1.00
0.5
0.2
0.1
0.10 _0.05
0.02
Transient Thermal Response - Junction to Case
0.01
Single Pulse
Notes:
P_DM
0.00
1.0E-06 1.0E-05
t1
t2
Duty Cycle, D =
t1
t2
1.0E-04 1.0E-03 1.0E-02 1.0E-01
t - Time (seconds)
1.0E-00
1000
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