ICE10N65 Datasheet, PDF (3/4 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

ICE10N65
Output Characteristics
30
V_GS = 10V
30
25
25
7V
20
20
6V
15
15
10
10
5V
5
5
0
0
0
3
6
9
12
15
0
V_DS - Drain to Source Voltage (V)
Transfer Characterstics
T_J = 150°C
25°C
2
4
6
8
10
V_GS - Gate to Source Voltage (V)
800
700
600
500
400
300
200
100
0
0
On State Resistance vs Drain Current
V_GS = 10V
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 4.7A
2.5
2.0
1.5
1.0
0.5
5
10
15
20
25
30
I_D - Drain Current (A)
0.0
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Gate Charge
10
9
8
V_DS = 10V
7
I_D = 4.7A
6
5
4
3
2
1
0
0
10
20
30
40
Q_g - Total Gate Charge (nC)
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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