FFH50US60S Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – 50A, 600V Stealth™ Diode

Ordering Guide
Part Number
Format
Detail / Drawing
FFH50US60S MW
Un-sawn wafer, electrical rejects inked
Page 2
FFH50US60S MF
Sawn wafer on film-frame
Page 3
FFH50US60S MD
Singulated die / chips in waffle pack
Page 3
Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request
Die Drawing – Dimensions in µm
40
4064
3048
Passivated area
3048
ANODE
4064
Chip backside is CATHODE
Mechanical Data
Parameter
Chip Dimensions Un-sawn
Chip Thickness (Nominal)
Anode Pad Size
Wafer Diameter
Saw Street
Wafer orientation on frame
Topside Metallisation & Thickness
Backside Metallisation & Thickness
Topside Passivation
Recommended Die Attach Material
Recommended Wire Bond - Anode
4064 x 4064
250
3048 x 3048
127 (subject to change)
80 (subject to change)
Wafer notch parallel with frame flat
Al
6
V/Ni/Ag
0.3
Silicon Nitride
Soft Solder or Conductive Epoxy
Al 380µm X3
Units
µm
µm
µm
mm
µm
µm
µm
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