FFH50US60S Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – 50A, 600V Stealth™ Diode

STEALTH™ Rectifier Diode Chip
600V, 50A, V_F 1.38V, t_rr = 75ns
FFH50US60S
Part
FFH50US60S
V_RRM
600V
I_F(AV)n
50A
V_{F Typ}
1.38V
t_{rr Typ}
75ns
Die Size
4.06 x 4.06 mm²
See page 2 for ordering part numbers & supply formats
Applications
Features
• General Purpose
• Soft Recovery, t_rr = 75ns @ I_F = 50A
• Free Wheeling Diode
• Low V_F & Reverse Recovery Current
Maximum Ratings
• Avalanche Energy Rated
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
E_AVL
T_J, T_STG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current @ T_C = 120°C¹
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave
Avalanche Energy (1A, 40mH)³
Operation Junction & Storage Temperature
Ratings
600
600
600
50
500
20
-55 to 175
Units
V
V
V
A
A
mJ
°C
Electrical Characteristics @ 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Forward Voltage²
V_F
I_F = 50A
T_C = 25°C
- 1.38 1.54
V
T_C = 125°C
- 1.37 1.53
I_R
t_rr
t_rr
I_R(REC)
Q_RR
t_rr
S
I_R(REC)
Q_RR
Instantaneous Reverse
Current²
Reverse Recovery Time³
Reverse Recovery Time³
Reverse Recovery Current³
Reverse Recovery Charge³
Reverse Recovery Time³
Softness Factor (t_b/t_a)³
Reverse Recovery Current³
Reverse Recovery Charge³
V_R = 600V
T_C = 25°C
-
- 100
μA
T_C = 125°C
-
-
1
mA
I_F = 1A, dl/dt = 100A/µs, V_R =15V
-
47
-
I_F = 50A, dl/dt = 100A/µs, V_R = 15V
-
75
-
ns
- 113 -
I_F = 50A, dI/dt = 200A/μs
V_R = 390V, T_C = 25°C
- 9.6 -
A
- 0.9 -
µC
I_F = 50A, dI/dt = 200A/μs
V_R = 390V, T_C = 125°C
- 235 -
ns
- 1.5 -
-
-
15
-
A
- 2.3 -
µC
Notes:
1. Performance will vary based on assembly technique and substrate choice
2. Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
3. Specified in discrete package, not subject to 100% production test at wafer level
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