MYXX28HC256 Datasheet, PDF (1/23 Pages) Micross Components – No External High Voltages or VPP

256Kb EEPROM
MYXX28HC256
32K x 8 EEPROM - 5 Volt, Byte Alterable
Description
The MYXX28HC256 is a high performance CMOS 32K x 8 E²PROM. It is
fabricated with a textured poly floating gate technology, providing a highly
reliable 5 Volt only nonvolatile memory.
The MYXX28HC256 supports a 128-byte page write operation, effectively
providing a 24ms/byte write cycle and enabling the entire memory to
be typically rewritten in less than 0.8 seconds. The MYXX28HC256 also
features DATA Polling and Toggle Bit Polling, two methods of providing
early end of write detection. The MYXX28HC256 also supports the
JEDEC standard Software Data Protection feature for protecting against
inadvertent writes during power-up and power-down.
Endurance for the MYXX28HC256 is specified as a minimum 100,000
write cycles per byte and an inherent data retention of 100 years.
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
CerDIP or
Flat Pa_Cc_Cek_{reDrDIPIPoror}
FlFaltaPt aPcakck
CerSOJ or
Cer_CL_CeC_reSC_{rOSOJ Joror}
CCereLrCLCC
1
A21A414
A3₁A₂₁₂
4^A7A7
5^A6A6
6^A5A5
7^A4A4
8^A3A3
9^A2A2
1^A0^1A1
III¹¹¹///OOO^1A₂₃III///⁰⁰¹²OOOA0012
V¹_S⁴V_SSS
28
1 1 27
2 2 26
3 3 ₂₅
4 4 ₂₄
5 5 ₂₃
6 6 ₂₂
7 7 ₂₁
8 8 ₂₀
99
19
1010
1111 ¹⁸
1212 ¹⁷
1313 ¹⁶
1414 ¹⁵
VCC
2W82E8#
2A7₁2₃7
2_A6₈26
2_A5₉25
2_A4₁2₁4
2_O32_E3_#
22_AC21_1E22₀21_#
2020
1^I/9^O19⁷
1^I/8^O18⁶
1^I/7^O17⁵
1^I/6⁰146
1^I/5^O153
VCV_CCC
WWE#E#
A1A₃₁^A₃6
A8A8^A5
A9A9^A4
A1A₁₁A_{1 3}
OEO#EA#₂
A1A₀₁A₀₁
CEC#E_A#₀
I/OI/₇O_N7C
I/OI/_I6O_/O60
I/OI/₅O5
I/0I₄/04
I/OI/₃O3
4 3 2 1 32 31 30
5
4 4 3 3 2 2 1 132323₂1₉313030_A8
A₆₆A6 5 5
28 ²⁹²A⁹₉ ^A8A8
A₇₅A5 6 6
27 ²⁸²A⁸₁₁ ^A9A9
A₈₄A4 7 7
26 ²⁷²N⁷C ^A1A111
A₉₃A3
A₁₂A₀₂
A₁₁₁A1
89M89YX2_M8C_YMX3_Y2_2XK_82C8_{83C23K28K22854}
1010
23
262_O6_E#NCNC
225422_AC54_1E0#OA1EOA_0#1E0#
A₁₀A₂₀
NCNC
I/OI¹/₀O³¹₀₄
1111
2323 CEC#E#
1¹¹5²³¹¹¹₄1²³¹6₄₁₅1₁7₅₁₆₁1₆8₁₇₁1₇9₁₈₁2₈₁022₉²¹_1920222²¹₀₂₂^{II21//OO76II//OOII//76OO76}
CerPGA
CCerePrGPGAA
I/O1
I/O2
I/O3
12 _I/OI/1O1 13_I/OI/2O2 15_I/OI/3O3
1212 1313 1515
I/O0
A0
VSS
11 _I/OI/0O0 10 _A0A0 14_{VSVS SS}
1111 1010 1414
A1
A2
9 A1A1 8 A2A2
99 88
I/O5
17_I/OI/5O5
1717
I/O4
16_I/OI/4O4
1616
CE
20CECE
2020
A3
A4
7 ^A3^A3 6 ^A4^A4
77 66
OE
22^OEOE
2222
I/O6
1_I8_/OI/6O6
1818
I/O7
1_I9_/OI/7O7
1919
A10
2A11A0 10
2121
A11
2^A31^A1 11
2323
A5
5
A5A5
55
A₂12_{A21A2212 2}V₈C₂C_V8C2VC8CC
2^A4₂^9A₄⁹₂^A₄⁹
2^A₂5^A8₅⁸₂^A₅⁸
A6
4
A6A6
44
A7
3
A7A7
33
A₁14_A11A4114
W_27W2E_7EW27E
2^A₂^A6¹₆³¹₂^A3₆¹³
Figure 1 - Pin Configuration
Features
• Access Time (ns): 70, 90, 120, 150
• Simple Byte and Page Write
 Single 5V Supply
 No External High Voltages or VPP
Control Circuits
 Self-Timed
 No Erase Before Write
 No Complex Programming
Algorithms
 No Overerase Problem
• Low Power CMOS:
 Active: 60mA
 Standby: 500mA
• Software Data Protection
 Protects Data Against System Level
Inadvertent Writes
• High Speed Page Write Capability
• Highly Reliable Direct Write™ Cell
 Endurance: 100,000 Write Cycles
 Data Retention: 100 Years
• Early End of Write Detection
 DATA Polling
 Toggle Bit Polling
Options
Timing
70 ns access
90 ns access
120 ns access
150 ns access
Packages Ceramic flat pack
CerDIP, 600 mil
CerLCC
CerPGA
CerSOJ
Markings
-7
-9
-12
-15
F
CW
ECA
P
ECJ
Operating Military (-55°C to +125°C) XT
Temp. Industrial (-40°C to +85°C) IT
MYXX28HC256
Revision 1.4 - 02/13
1