FFP30S60S Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – STEALTH II Rectifier

STEALTH™ II Rectifier Diode Chip
600V, 30A, V_F 2.1V, t_rr = 28ns
FFP30S60S
Part
FFP30S60S
V_RRM
600V
I_F(AV)n
30A
V_{F Typ}
2.1V
t_{rr Typ}
28ns
Die Size
3.7 x 3.7 mm²
See page 2 for ordering part numbers & supply formats
Applications
Features
• General Purpose
• Hyperfast Soft Recovery t_rr = 28ns @ I_F = 30A
• Free Wheeling Diode
• Low Stored Charge
Maximum Ratings
• Avalanche Energy Rated
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
T_J, T_STG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current @ T_C = 103°C¹
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave
Operation Junction & Storage Temperature
Ratings
600
600
600
30
300
-65 to 150
Units
V
V
V
A
A
°C
Electrical Characteristics, T_J = 25° unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
V_F
Forward Voltage²
I_F = 30A
T_C = 25°C
-
2.1
2.6
V
I_R
Reverse Current²
V_R = 600V
T_C = 125°C
-
T_C = 25°C
-
1.6
-
-
100
µA
T_C = 125°C
-
-
500
I_F = 1A,dI/dt = 100A/µs, V_R= 30V T_C = 25°C
-
25
-
t_rr
Reverse Recovery
Time³
T_C = 25°C
-
28
-
ns
T_C = 125°C
-
75
-
I_rr
Reverse Recovery
T_C = 25°C
-
2.4
-
A
Current³
I_F = 30A, dI/dt = 200A/µs,
T_C = 125°C
-
6.3
-
S factor
Softness Factor³
V_R= 390V
T_C = 25°C
-
0.9
-
T_C = 125°C
-
0.9
-
Q_rr
W_AVL
Reverse Recovery
Charge³
Avalanche Energy (L = 40mH)³
T_C = 25°C
-
34
T_C = 125°C
-
236
20
-
-
nC
-
-
mJ
Notes: 1. Performance will vary based on assembly technique and substrate choice. 2. Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
3. Tested in discrete package, not subject to 100% test at wafer level
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