APTGV15H120T3G Datasheet, PDF (8/9 Pages) Microsemi Corporation – Full - Bridge NPT & Trench + Field Stop® IGBT Power module

Turn-On Delay Time vs Collector Current
75
V_CE = 600V
70 RG = 33Ω
65
V_GE = 15V
60
55
50
0
5 10 15 20 25 30 35
I_CE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
160
V_CE = 600V
R_G = 33Ω
120
80
V_GE=15V
40
0
0 5 10 15 20 25 30 35
I_CE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
8
7
V_CE = 600V
R_G = 33Ω
6
T_J=125°C,
V_GE=15V
5
4
3
T_J=25°C,
V_GE=15V
2
1
0
0 5 10 15 20 25 30 35
I_CE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
8
V_CE = 600V
7
V_GE = 15V
6 ^{TJ= 125°C}
Eon, 15A
5
4
3
Eoff, 15A
2
1
0
0
20 40 60 80 100 120
Gate Resistance (Ohms)
APTGV15H120T3G
Turn-Off Delay Time vs Collector Current
400
350
V_GE=15V,
T_J=125°C
300
250
V_CE = 600V
R_G = 33Ω
V_GE=15V,
T_J=25°C
200
0 5 10 15 20 25 30 35
I_CE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
50
45
T_J = 125°C
40
35
T_J = 25°C
30
25
V_CE = 600V, V_GE = 15V, R_G = 33Ω
20
0 5 10 15 20 25 30 35
I_CE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
2.5
V_CE = 600V
2
V_GE = 15V
R_G = 33Ω
T_J = 125°C
1.5
T_J = 25°C
1
0.5
0
0 5 10 15 20 25 30 35
I_CE, Collector to Emitter Current (A)
35
30
25
20
15
10
5
0
0
Reverse Bias Safe Operating Area
400
800
1200
V_CE, Collector to Emitter Voltage (V)
www.microsemi.com
8-9