APTGV15H120T3G Datasheet, PDF (1/9 Pages) Microsemi Corporation – Full - Bridge NPT & Trench + Field Stop® IGBT Power module

APTGV15H120T3G
Full - Bridge
NPT & Trench + Field Stop^® IGBT
Power module
Trench & Field Stop^® IGBT Q1, Q3:
V_CES = 1200V ; I_C = 15A @ Tc = 80°C
Fast NPT IGBT Q2, Q4:
V_CES = 1200V ; I_C = 15A @ Tc = 80°C
13 14
Q1
Q3
18
CR1 CR3
11
19
10
22 7
23 8
Q2
Q4
CR2 CR4
26
4
27
3
29
30
15
31
32
16
R1
Top switches : Trench + Field Stop IGBT^®
Bottom switches : FAST NPT IGBT^®
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
13/14 ; 15/16 ; 26/27 ; 31/32
Application
• Solar converter
Features
• Q2, Q4 (FAST Non Punch Through (NPT) IGBT)
- Switching frequency up to 50 kHz
- RBSOA & SCSOA rated
- Low tail current
• Q1, Q3 (Trench & Field Stop IGBT^®)
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Optimized conduction & switching losses
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive T_C of V_CEsat
• RoHS Compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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