APT46GA90JD40 Datasheet, PDF (8/9 Pages) Microsemi Corporation – High Speed PT IGBT

Dynamic Characteristics
T_J = 25°C unless otherwise specified
APT46GA90JD40
120
100
80
T_J = 175°C
60
T_J = 125°C
40
T_J = 25°C
20
T_J = -55°C
0
0
1.0
2.0
3.0
4.0
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
4000
3500
T_J = 125°C
V_R = 667V
80A
3000
2500
40A
2000
1500
20A
1000
500
400
350
80A
T_J = 125°C
V_R = 667V
300
40A
250
20A
200
150
100
50
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
35
T_J = 125°C
V_R = 667V
30
80A
25
20
15
40A
10
20A
5
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
1.0
t_rr
0.8
I_RRM
Q_rr
t_rr
0.6
0.4
Q_rr
0.2
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
70
Duty cycle = 0.5
T_J = 175°C
60
50
40
30
20
10
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
160
0
25 50
75 100 125 150 175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
140
120
100
80
60
40
20
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage