APT46GA90JD40 Datasheet, PDF (3/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
150
V_GE = 15V _{TJ= 25°C}
125
T_J= 55°C
T_J= 125°C
100
75
T_J= 150°C
50
25
0
0
1
2
3
4
56
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
150
250μs PULSE
TEST<0.5 % DUTY
CYCLE
125
100
75
50
T_J= 25°C
25
T_J= 125°C
T_J= -55°C
0
0
4
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
T_J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
3
I_C = 47A
I_C = 94A
2
I_C = 23.5A
1
0
24
6 8 10 12 14 16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
350
15V 13V
10V
300
9V
250
APT46GA90JD40
200
8V
150
7V
100
6V
50
5V
0
0 4 8 12 16 20 24 28 32
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
16
I_C = 47A
14
T_J = 25°C
V_CE = 180V
12
V_CE = 450V
10
8
V_CE = 720V
6
4
2
0
0 1 2 3 4 5 67
GATE CHARGE (nC)
FIGURE 4, Gate charge
6
5
4
I_C = 94A
3
I_C = 47A
2
I_C = 23.5A
1
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25
50 75 100
125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
80
70
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature